Title :
Depletion transistor threshold voltage as a process monitor
Author :
Burghard, Ronald A. ; El-Mansy, Youssef A.
Author_Institution :
Intel Corporation, Aloha, OR
fDate :
4/1/1987 12:00:00 AM
Abstract :
The substrate bias effect on threshold voltages can be extended to extract doping profiles on depletion devices. To obtain additional profile information near the surface, low level forward biasing of the source to substrate junction is utilized. The analysis is divided into the surface inversion region to obtain the channel doping and the depleted channel region to measure the substrate doping.
Keywords :
CMOS technology; Circuit analysis; Data mining; Doping profiles; FET integrated circuits; Integrated circuit measurements; Monitoring; Niobium; Threshold voltage; Voltage measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23023
