Current transport mechanism at the emitter-base junction of an n-p-n GaAs/GaAlAs heterojunction bipolar transistor prepared by MBE

In this brief we present a simple model for the current transport across the emitter-base junction of an n-p-n GaAs/GaAlAs heterojunction bipolar transistor prepared by MBE. Experimental data obtained on the temperature dependence of the base and collector current components yield activation energy values that correspond to Eg(GaAs) and Eg(GaAs)/2, respectively. The analysis of this result suggests that the majority of the recombination process takes place at the GaAs base end of the emtter-base heterojunction rather than the AlGaAs emitter region.