High performance low temperature polysilicon thin film transistor using ECR plasma thermal oxide as gate insulator

Author

Lee, Jung-Yeal ; Han, Chul-Hi ; Kim, Choong-ki

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

15

Issue

8

fYear

1994

Firstpage

301

Lastpage

303

Abstract

Electron cyclotron resonance (ECR) plasma thermal oxide has been investigated as a gate insulator for low temperature (/spl les/600/spl deg/C) polysilicon thin-film transistors based on solid phase crystallization (SPC) method. The ECR plasma thermal oxide films grown on a polysilicon film has a relatively smooth interface with the polysilicon film when compared with the conventional thermal oxide and it shows good electrical characteristics. The fabricated poly-Si TFT´s without plasma hydrogenation exhibit field-effect mobilities of 80 (60) cm/sup 2//V/spl middot/s for n-channel and 69 (48) cm/sup 2//V/spl middot/s for p-channel respectively when using Si/sub 2/H/sub 6/(SiH/sub 4/) source gas for the deposition of active poly-Si films.<>

Keywords

carrier mobility; electronic conduction in insulating thin films; elemental semiconductors; insulating thin films; plasma CVD; plasma CVD coatings; silicon; thin film transistors; 600 C; ECR plasma thermal oxide; Si-SiO/sub 2/; Si/sub 2/H/sub 6/; SiH/sub 4/; electron cyclotron resonance; field-effect mobilities; gate insulator; low temperature polysilicon; n-channel; p-channel; poly-Si TFT; solid phase crystallization; thin film transistor; Crystallization; Cyclotrons; Electric variables; Electrons; Insulation; Plasma properties; Plasma temperature; Resonance; Solids; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.296223

Filename

296223