Title :
Threshold field and peak-valley velocity ratio in short samples of InP at 300 K
Author :
Nag, B.R. ; Ahmed, S.R.
Author_Institution :
Calcutta University, Calcutta, India
fDate :
5/1/1987 12:00:00 AM
Abstract :
The transient and steady-state velocity-field characteristics of InP at 300 K are calculated for short samples by using a Monte Carlo model. It is found that the threshold field for negative differential resistance increases with a decrease in the sample length, but the peak-valley velocity ratio is almost independent of the sample length.
Keywords :
Computational modeling; Diodes; Electrons; Impurities; Indium phosphide; Lattices; Monte Carlo methods; Scattering; Space charge; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23029
