Title :
Metal-to-metal antifuses with very thin silicon dioxide films
Author :
Zhang, G. ; Hu, C. ; Yu, P. ; Chiang, S. ; Hamdy, E.
Author_Institution :
Dept. of Phys., California Univ., Berkeley, CA, USA
Abstract :
Antifuse samples with very thin insulating oxide were fabricated using a technique of two-step PECVD oxide deposition. Dielectric strength as high as 13 MV/cm was obtained for our samples. Defect density and uniformity have been improved in this way. The on-state resistance of the programmed antifuses shows a stronger dependence on the oxide thickness when it was programmed at the lower current than when it was programmed at the higher current.<>
Keywords :
PROM; electric strength; insulating thin films; logic arrays; metal-insulator boundaries; plasma CVD; plasma CVD coatings; silicon compounds; tungsten; W-Ti-SiO/sub 2/; defect density; dielectric strength; metal-to-metal antifuses; on-state resistance; oxide thickness; programmed antifuses; thin silicon dioxide films; two-step PECVD oxide deposition; uniformity; Capacitors; Dielectrics and electrical insulation; Electric breakdown; Electrodes; Leakage current; Semiconductor films; Silicon compounds; Technological innovation; Titanium; Tungsten;
Journal_Title :
Electron Device Letters, IEEE
