Hot-carrier effects in Hydrogen-passivated p-channel polycrystalline-Si MOSFET´s

The dependence of hot-carrier effects on channel length and stress-bias voltage in hydrogen-passivated accumulation-mode p-channel polycrystalline-Si MOSFET´s operating in the saturation region has been studied, Before stress, these devices exhibit a minimum value of current at VGS≈ 0 V but as VGSincreases above 0 V, they show an increase in (leakage) current due to field-enhanced generation of carriers near the drain. After stress, the current at VGS≈ 0 V increases slightly with respect to its pre-stress value. However, the current then monotonically decreases as VGSincreases above 0 V unlike the situation before stress. No change in reverse mode (source and drain reversed) characteristics and no change in the ON-state (VGS< 0 V) forward-mode characteristic was observed after stress. These observations are shown to be due to hot-carrier-induced acceptor-type interface states near the drain in forward-mode operation.