The rapid measurement of generation lifetime in MOS capacitors with long relaxation times

The Zerbst method used for the measurement of minority-charge-carrier generation lifetime in MOS capacitors has been modified. The suggested fast method avoids the time-consuming measurement of capacitance as a function of time by establishing the necessary intermediate states of partial inversion directly by appropriate voltage pulses. In this way the measurement time can be restricted to 5 min without loss of information, whereas the conventional Zerbst method takes about 1 h.