• DocumentCode
    1116615
  • Title

    An analytical threshold voltage model of short-channel MOSFET´s with implanted channels

  • Author

    DasGupta, A. ; Lahiri, S.K.

  • Author_Institution
    Indian Institute of Technology, Kharagpur, India
  • Volume
    34
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    1177
  • Lastpage
    1178
  • Abstract
    An analytical threshold voltage model based on a charge sharing technique is proposed using a new doubly integrable function to simulate the Gaussian channel doping. The model is computationally simple and predicts with reasonable accuracy the various short-channel effects and the anomalous positive threshold shift with shortening channel length.
  • Keywords
    Accuracy; Analytical models; Circuit analysis computing; Computational modeling; Doping profiles; Gaussian channels; Poisson equations; Predictive models; Semiconductor process modeling; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23061
  • Filename
    1486772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1116615