• DocumentCode
    1116628
  • Title

    Multidimensional Electro-Opto-Thermal Modeling of Broad-Band Optical Devices

  • Author

    Loeser, Martin ; Witzigmann, Bernd

  • Author_Institution
    Integrated Syst. Lab., Swiss Fed. Inst. of Technol. Zurich, Zurich
  • Volume
    44
  • Issue
    6
  • fYear
    2008
  • fDate
    6/1/2008 12:00:00 AM
  • Firstpage
    505
  • Lastpage
    514
  • Abstract
    This paper investigates the self-consistent modeling of broad-band optical devices such as super-luminescent light-emitting diodes (SLEDs) and semiconductor optical amplifiers. A multidimensional electro-opto-thermal approach using many-body gain theory, and temperature-dependent microscopic transport equations is presented. In addition, a Green´s function based model for amplified spontaneous emission is derived from Maxwell´s equations in a consistent way. To illustrate the model´s validity it is implemented into an existing simulation tool and benchmarked with two InP-based edge-emitting SLEDs operating around 1310 nm, featuring nonidentical quantum wells as active region. A comparison between simulated and measured characteristics (both electro-thermal and spectral) proves the applicability of the novel model.
  • Keywords
    Green´s function methods; III-V semiconductors; Maxwell equations; electro-optical effects; indium compounds; light emitting diodes; many-body problems; semiconductor quantum wells; superradiance; thermo-optical effects; Green´s function; InP; InP edge-emitting SLED; Maxwell´s equations; amplified spontaneous emission; broadband optical devices; many-body gain theory; microscopic transport equations; multidimensional electro-opto-thermal modeling; nonidentical quantum wells; super-luminescent light-emitting diodes; Biomedical measurements; Light emitting diodes; Maxwell equations; Microscopy; Multidimensional systems; Optical devices; Quantum well devices; Semiconductor optical amplifiers; Spontaneous emission; Superluminescent diodes; Modeling; simulation; spontaneous emission; super-luminescent l diodes;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2008.917786
  • Filename
    4479656