DocumentCode :
1116746
Title :
On the reliability of 1.3-µm InGaAsP/InP edge-emitting LED́s for optical-fiber communication
Author :
Ettenberg, Michael ; Olsen, Gregory H. ; Hawrylo, Frank Z.
Author_Institution :
RCA Laboratories, Princeton, NJ, USA
Volume :
2
Issue :
6
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1016
Lastpage :
1023
Abstract :
This study of the reliability of 1.3-μm double heterojunction edge-emitting LED\´s indicates that edge-emitting LED\´s mounted with Au0.8 Sn0.2 solder have an activation energy of 0.9 eV for degradation and extrapolated lifetimes of 
h at room temperature. A study of 1.3-μm LED\´s grown by LPE and VPE show them to be comparable in operating life. The temperature dependence of the light output ( 
) of the edge-emitting LED\´s is given by 
( 
K). The study also showed that lattice mismatch up to 0.31 percent at the InGaAsP/InP heterojunction does not effect reliability.
h at room temperature. A study of 1.3-μm LED\´s grown by LPE and VPE show them to be comparable in operating life. The temperature dependence of the light output ( ) of the edge-emitting LED\´s is given by ( K). The study also showed that lattice mismatch up to 0.31 percent at the InGaAsP/InP heterojunction does not effect reliability.Keywords :
Component reliability; Light-emitting diodes (LED´s); Bandwidth; Degradation; Heterojunctions; Indium phosphide; Lattices; Optical coupling; Optical fiber communication; Power system reliability; Stimulated emission; Temperature dependence;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1984.1073711
Filename :
1073711
Link To Document :
