DocumentCode
111679
Title
Input Vector Monitoring Concurrent BIST Architecture Using SRAM Cells
Author
Voyiatzis, Ioannis ; Efstathiou, C.
Author_Institution
Dept. of Inf., Technol. Educ. Inst. of Athens, Athens, Greece
Volume
22
Issue
7
fYear
2014
fDate
Jul-14
Firstpage
1625
Lastpage
1629
Abstract
Input vector monitoring concurrent built-in self test (BIST) schemes perform testing during the normal operation of the circuit without imposing a need to set the circuit offline to perform the test. These schemes are evaluated based on the hardware overhead and the concurrent test latency (CTL), i.e., the time required for the test to complete, whereas the circuit operates normally. In this brief, we present a novel input vector monitoring concurrent BIST scheme, which is based on the idea of monitoring a set (called window) of vectors reaching the circuit inputs during normal operation, and the use of a static-RAM-like structure to store the relative locations of the vectors that reach the circuit inputs in the examined window; the proposed scheme is shown to perform significantly better than previously proposed schemes with respect to the hardware overhead and CTL tradeoff.
Keywords
SRAM chips; built-in self test; design for testability; SRAM cells; built-in self test; concurrent test latency; hardware overhead; input vector monitoring concurrent BIST architecture; Built-in self-test; Clocks; Hardware; Logic gates; Monitoring; Vectors; Built-in self-test; design for testability; testing; testing.;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2013.2278439
Filename
6589193
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