• DocumentCode
    111679
  • Title

    Input Vector Monitoring Concurrent BIST Architecture Using SRAM Cells

  • Author

    Voyiatzis, Ioannis ; Efstathiou, C.

  • Author_Institution
    Dept. of Inf., Technol. Educ. Inst. of Athens, Athens, Greece
  • Volume
    22
  • Issue
    7
  • fYear
    2014
  • fDate
    Jul-14
  • Firstpage
    1625
  • Lastpage
    1629
  • Abstract
    Input vector monitoring concurrent built-in self test (BIST) schemes perform testing during the normal operation of the circuit without imposing a need to set the circuit offline to perform the test. These schemes are evaluated based on the hardware overhead and the concurrent test latency (CTL), i.e., the time required for the test to complete, whereas the circuit operates normally. In this brief, we present a novel input vector monitoring concurrent BIST scheme, which is based on the idea of monitoring a set (called window) of vectors reaching the circuit inputs during normal operation, and the use of a static-RAM-like structure to store the relative locations of the vectors that reach the circuit inputs in the examined window; the proposed scheme is shown to perform significantly better than previously proposed schemes with respect to the hardware overhead and CTL tradeoff.
  • Keywords
    SRAM chips; built-in self test; design for testability; SRAM cells; built-in self test; concurrent test latency; hardware overhead; input vector monitoring concurrent BIST architecture; Built-in self-test; Clocks; Hardware; Logic gates; Monitoring; Vectors; Built-in self-test; design for testability; testing; testing.;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2013.2278439
  • Filename
    6589193