DocumentCode :
111679
Title :
Input Vector Monitoring Concurrent BIST Architecture Using SRAM Cells
Author :
Voyiatzis, Ioannis ; Efstathiou, C.
Author_Institution :
Dept. of Inf., Technol. Educ. Inst. of Athens, Athens, Greece
Volume :
22
Issue :
7
fYear :
2014
fDate :
Jul-14
Firstpage :
1625
Lastpage :
1629
Abstract :
Input vector monitoring concurrent built-in self test (BIST) schemes perform testing during the normal operation of the circuit without imposing a need to set the circuit offline to perform the test. These schemes are evaluated based on the hardware overhead and the concurrent test latency (CTL), i.e., the time required for the test to complete, whereas the circuit operates normally. In this brief, we present a novel input vector monitoring concurrent BIST scheme, which is based on the idea of monitoring a set (called window) of vectors reaching the circuit inputs during normal operation, and the use of a static-RAM-like structure to store the relative locations of the vectors that reach the circuit inputs in the examined window; the proposed scheme is shown to perform significantly better than previously proposed schemes with respect to the hardware overhead and CTL tradeoff.
Keywords :
SRAM chips; built-in self test; design for testability; SRAM cells; built-in self test; concurrent test latency; hardware overhead; input vector monitoring concurrent BIST architecture; Built-in self-test; Clocks; Hardware; Logic gates; Monitoring; Vectors; Built-in self-test; design for testability; testing; testing.;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2013.2278439
Filename :
6589193
Link To Document :
بازگشت