Title :
A model for PolySilicon MOSFET´s
Author :
Anwar, A. M F ; Khondker, A.N.
Author_Institution :
Clarkson University, Potsdam, NY
fDate :
6/1/1987 12:00:00 AM
Abstract :
A model is developed to describe the high value of threshold voltage and the low value of channel mobility observed in n-channel polysilicon (poly-Si) MOSFET´s. The model takes into account charge-coupling between the gate and grain boundary traps. The charge-coupling appears as an image charge in Poisson´s equation and the charge neutrality equation. Finally, a drift-diffusion mode of conduction is used to describe the channel conductance beyond the strong inversion threshold.
Keywords :
Analytical models; Annealing; Grain boundaries; Laser modes; Laser theory; Low voltage; Plasma properties; Poisson equations; Strips; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23087
