• DocumentCode
    1116858
  • Title

    A model for PolySilicon MOSFET´s

  • Author

    Anwar, A. M F ; Khondker, A.N.

  • Author_Institution
    Clarkson University, Potsdam, NY
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • fDate
    6/1/1987 12:00:00 AM
  • Firstpage
    1323
  • Lastpage
    1330
  • Abstract
    A model is developed to describe the high value of threshold voltage and the low value of channel mobility observed in n-channel polysilicon (poly-Si) MOSFET´s. The model takes into account charge-coupling between the gate and grain boundary traps. The charge-coupling appears as an image charge in Poisson´s equation and the charge neutrality equation. Finally, a drift-diffusion mode of conduction is used to describe the channel conductance beyond the strong inversion threshold.
  • Keywords
    Analytical models; Annealing; Grain boundaries; Laser modes; Laser theory; Low voltage; Plasma properties; Poisson equations; Strips; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23087
  • Filename
    1486798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1116858