Title :
Efficient Gallium–Arsenide Disk Laser
Author :
Beyertt, Svent-Simon ; Brauch, Uwe ; Demaria, Frank ; Dhidah, Nacef ; Giesen, Adolf ; Kübler, Thomas ; Lorch, Steffen ; Rinaldi, Fernando ; Unger, Peter
Author_Institution :
Jenoptik Laserdiode, Jena
Abstract :
Means that may optimize the efficiency of semiconductor disk lasers (optically pumped vertical external-cavity surface-emitting lasers) are discussed: the direct pumping of the quantum wells (QWs), the optimization of the interaction of the QWs with pump and laser field and the reduction of resonator losses by employing a dielectric/semiconductor Bragg reflector on the front face of the disk. GaAs-AlGaAs-quantum-well disk lasers designed accordingly achieved slope efficiencies of 67% and optical efficiencies of 55% (based on the absorbed pump power) with output powers well above 1 W and a pump absorption efficiency of 80%. With an additional simple pump re-imaging an output power of 1.6 W was realized with an optical efficiency of 50% related to the incident pump power.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; optical pumping; quantum well lasers; surface emitting lasers; GaAs-AlGaAs; GaAs-AlGaAs-quantum-well disk lasers; dielectric Bragg reflector; gallium-arsenide disk laser; optically pumped vertical external-cavity surface-emitting lasers; power 1.6 W; pump absorption efficiency; semiconductor Bragg reflector; semiconductor disk lasers; Dielectric losses; III-V semiconductor materials; Laser excitation; Optical pumping; Optical resonators; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Dielectric coating; distributed Bragg reflector (DBR); gallium arsenide (GaAs); in-well pumping; optical pumping; quantum well (QW); resonant pumping; semiconductor disk laser; vertical external-cavity surface-emitting laser (VECSEL);
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2007.904074