Title :
Design, Fabrication, and Characterization of an Ultracompact Low-Loss Photonic Crystal Corner Mirror
Author :
Yu, Hejun ; Yu, Jinzhong ; Yu, Yude ; Fan, Zhong-Chao ; Chen, Shaowu
Author_Institution :
Chinese Acad. of Sci., Beijing
Abstract :
An ultracompact, low-loss, and broad-band corner mirror, based on photonic crystals, is investigated in this paper. Based on the theoretical analysis of the loss mechanism, the boundary layers of the photonic crystal region are revised to improve the extra losses, and the transmission characteristics are evaluated by using the 3-D finite-difference time-domain method. The device with optimized structure was fabricated on silicon-on- insulator substrate by using electron-beam lithography and inductively coupled plasma etching. The measured extra losses are about 1.1plusmn0.4 dB per corner mirror for transverse-electronic polarization for the scanning wavelength range of 1510-1630 nm. Dimensions of the achieved PC corner mirror are less than 7times7 mum2, which are only about one tenth of conventional waveguide corner mirrors.
Keywords :
electron beam lithography; finite difference time-domain analysis; integrated optics; mirrors; optical design techniques; optical fabrication; optical losses; photonic crystals; sputter etching; 3D finite-difference time-domain method; Si-SiO2 - Surface; boundary layers; broadband corner mirror; electron-beam lithography; inductively coupled plasma etching; low-loss corner mirror; optical design; optical fabrication; photonic crystal corner mirror; photonic crystals; silicon-on-insulator substrate; transmission characteristics; transverse-electronic polarization; ultracompact corner mirror; wavelength 1510 nm to 1630 nm; Fabrication; Finite difference methods; Insulation; Lithography; Mirrors; Optical losses; Photonic crystals; Plasma measurements; Propagation losses; Time domain analysis; Corner mirror; electron-beam lithography (EBL); photonic crystal (PC); reflector; silicon-on-insulator (SOI);
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2007.904307
