DocumentCode
1116994
Title
A model-based comparison of switching characteristics between collector-top and emitter-top HBT´s
Author
Akagi, Junko ; Yoshida, Jiro ; Kurata, Mamoru
Author_Institution
Toshiba Research and Development Center, Kawasaki, Japan
Volume
34
Issue
7
fYear
1987
fDate
7/1/1987 12:00:00 AM
Firstpage
1413
Lastpage
1418
Abstract
A model-based comparison is made between the collector-top GaAs/AlGaAs heterojunction bipolar transistor (HBT) and the emitter-top HBT, in regard to their switching performance. An equivalent-circuit transistor model that is derived from a one-dimensional numerical model is employed, together with our original circuit simulator that allows embedding of arbitrary device models. All the simulated results, obtained from various kinds of ring oscillators and CML divide-by-four circuits, indicate the superiority of the collector-top structure, especially for nonsaturation logic.
Keywords
Capacitance; Delay; Diodes; Electrodes; Gallium arsenide; Heterojunction bipolar transistors; Logic circuits; Logic devices; Logic testing; Ring oscillators;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23101
Filename
1486812
Link To Document