• DocumentCode
    1117092
  • Title

    High-field transport in InGaAs/InAlAs modulation-doped heterostructures

  • Author

    Hong, Won-Pyo ; Bhattacharya, Pallab K.

  • Author_Institution
    University of Michigan, Ann Arbor, MI
  • Volume
    34
  • Issue
    7
  • fYear
    1987
  • fDate
    7/1/1987 12:00:00 AM
  • Firstpage
    1491
  • Lastpage
    1495
  • Abstract
    The velocity-field and mobility-field characteristics of normal and inverted InGaAs/InAlAs modulation-doped heterostructures grown by molecular-beam epitaxy have been measured at 300 and 77 K. Veloczities of 3.0 × 107and 1.7 × 107cm/s have been measured in the normal and inverted structures, respectively, at 77 K. Current instabilities are observed at the corresponding field values. Hall mobilities decrease With field beyond 500 V/cm, principally due to phonon scattering. The mobilities in normal and inverted heterostructures attain Similar values at fields higher than 1 kV/cm, irrespective of the low-field values.
  • Keywords
    Current measurement; Epitaxial layers; FETs; Gallium arsenide; Hall effect; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Velocity measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23110
  • Filename
    1486821
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1117092