DocumentCode :
1117285
Title :
Surface charge effects on planar submicrometer GaAs and InP devices
Author :
Bru, Catherine ; Carné, PatriceDe ; Dansas, Pierre ; Pascal, Daniel ; Rousseau, Michel ; Laval, Suzanne
Author_Institution :
C.N.R.S., Université Paris-Sud, Bâtiment, Orsay Cedex, France
Volume :
34
Issue :
8
fYear :
1987
fDate :
8/1/1987 12:00:00 AM
Firstpage :
1611
Lastpage :
1616
Abstract :
The influence of surface charge effects on the behavior of planar GaAs and InP devices is demonstrated by measuring and calculating the resistances of devices versus the interelectrode length. Both the depletion layer in GaAs and the accumulation layer in InP are shown to be dependent on the interelectrode distance in submicrometer samples.
Keywords :
Doping; Gallium arsenide; Indium phosphide; Ohmic contacts; Performance analysis; Performance evaluation; Semiconductor materials; Shape; Strips; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23128
Filename :
1486839
Link To Document :
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