DocumentCode :
1117333
Title :
Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors
Author :
Baek, Junho ; Shur, Michael S. ; Daniels, Robert R. ; Arch, David K. ; Abrokwah, Jonathon K. ; Tufte, Obert N.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
34
Issue :
8
fYear :
1987
fDate :
8/1/1987 12:00:00 AM
Firstpage :
1650
Lastpage :
1657
Abstract :
We present the results of theoretical and experimental studies of heterostructure insulated-gate field-effect transistors (HIG´ FET´s). We develop an improved charge-control model for the two-dimensional densities of electronand hole gases at the heterointerface. Our model provides an accurate description of the device behavior even at relatively low densities of two-dimensional gases. We obtain the current-voltage characteristics of HIGFET´s using our charge-control model and account for the gate current. The theoretical calculations are in good agreement with the experimental measurements.
Keywords :
Analytical models; Capacitance-voltage characteristics; Charge carrier processes; Electrons; FETs; Gases; HEMTs; Insulation; Integrated circuit modeling; MODFETs;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23133
Filename :
1486844
Link To Document :
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