A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion

Author

Dai, Mingzhi ; Gao, Chao ; Yap, Kinleong ; Shan, Yi ; Cao, Zigui ; Liao, Kuangyang ; Wang, Liang ; Cheng, Bo ; Liu, Shaohua

Author_Institution

Chinese Acad. of Sci., Shanghai

Volume

55

Issue

5

fYear

2008

fDate

5/1/2008 12:00:00 AM

Firstpage

1255

Lastpage

1258

Abstract

An improved hot-hole-involved interface-state generation model is proposed for hot-carrier injection (HCI) degradation in high-voltage (HV) nMOSFETs. This model is based on experiments over a wide range of temperatures, voltage conditions, simulation results, and the underlying physical mechanisms. The model provides a thorough picture of an HCI system in HV nMOSFETs, with hot-hole injection related to an additional maximum electric-field region. The hot-hole injection in HCI is assumed to introduce deeper localized hydrogen states in gate-oxide films than that in negative-bias temperature instabilities. This result facilitates the dispersive transport of hydrogen. Therefore, HCI degradation in HV transistors is explained within the framework of disorder-controlled hydrogen kinetics. The power-law model can successfully predict temperature dependences for HCI degradation.

Keywords

MOSFET; charge injection; hot carriers; transistors; HCI degradation; HV transistor; gate-oxide film; high-voltage nMOSFET; hot-carrier injection; hot-hole dispersion; hot-hole injection; hot-hole-involved interface-state generation model; temperature; voltage condition; Degradation; Dispersion; Hot carrier injection; Hot carriers; Human computer interaction; Hydrogen; Kinetic theory; MOSFETs; Temperature distribution; Voltage; Degradation model; high-voltage (HV) transistor; hot-carrier-injection (HCI); hot-hole injection;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.919322

Filename

4480167