DocumentCode :
1117449
Title :
Heating effects on the accuracy of HBT voltage comparators
Author :
Wang, Keh-Chung ; Asbeck, Peter M. ; Chang, Mau-Chung F. ; Miller, D.L. ; Sullivan, Gerard J. ; Corcoran, John J. ; Hornak, Thomas
Author_Institution :
Rockwell International Science Center, Thousand Oaks, CA
Volume :
34
Issue :
8
fYear :
1987
fDate :
8/1/1987 12:00:00 AM
Firstpage :
1729
Lastpage :
1735
Abstract :
Voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBT´s) were examined for dynamic hysteresis effects. Heating effects were identified as the major source of hysteresis. An approximate model is proposed to explain the measured data. Suggestions for analog-to-digital converter design are discussed.
Keywords :
Analog-digital conversion; Circuit testing; Clocks; Frequency; Gallium arsenide; Heating; Heterojunction bipolar transistors; Hysteresis; Low voltage; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23144
Filename :
1486855
Link To Document :
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