DocumentCode
1117502
Title
Focused ion beam high T c superconducting SQUIDs
Author
Zani, M.J. ; Luine, J.A. ; Lee, G.S. ; Murduck, J.M. ; Hu, R. ; Lewis, M.J. ; Davidheiser, R.A. ; Eaton, L.R.
Author_Institution
TRW, Redondo Beach, CA, USA
Volume
27
Issue
2
fYear
1991
fDate
3/1/1991 12:00:00 AM
Firstpage
2557
Lastpage
2560
Abstract
The behavior of HTS thin films patterned into microbridge DC and RF SQUID structures and irradiated with a rastered high-energy focused ion beam 70 mm in diameter is discussed. DC SQUIDs have demonstrated 51% modulation of the critical current with an applied magnetic field at 46 K. All devices with appropriate critical currents exhibited Shapiro steps when exposed to microwave irradiation. Multiple interference patterns, probably from weak links within each microbridge segment, are seen at 4 K and disappear at temperatures above liquid helium. The I cR n product of the microbridges is typically a few millivolts, and the temperature dependence of the device resistance is consistent with electrical conduction through metallic filaments. The process demonstrates an acceptable yield and reliability for a variety of microelectronics applications
Keywords
SQUIDs; critical currents; high-temperature superconductors; ion beam effects; 46 K; DC SQUID structures; HTS thin films; RF SQUID structures; SQUIDs; Shapiro steps; applied magnetic field; critical current; device resistance; electrical conduction; high-temperature superconductors; metallic filaments; microbridge segment; microwave irradiation; multiple interference patterns; rastered high-energy focused ion beam; reliability; temperature dependence; yield; Critical current; High temperature superconductors; Interference; Ion beams; Magnetic fields; Magnetic modulators; Microwave devices; Radio frequency; SQUIDs; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.133738
Filename
133738
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