1-D array implementation of the resistively-coupled single-electron transistor

Author

Delsing, P. ; Claeson, T. ; Kazacha, G.S. ; Kuzmin, L.S. ; Likharev, K.K.

Author_Institution

Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

2581

Lastpage

2584

Abstract

The authors fabricated and tested the first version of the resistively coupled single-electron transistor (R-SET) based on the correlated transfer of single electrons in ultrasmall junctions. In this version, a one-dimensional array of 80×80 nm² Al/Al_xO_y/Al junctions served as a resistor for transmission of the signal to the middle electrode of a pair of similar junctions. Of three tested R-SETs, all exhibited a real power gain, and one device showed a DC voltage gain of 0.85. The data are found to be in reasonable agreement with numerical simulations based on the orthodox theory of correlated tunneling taking into account the superconductivity of aluminum electrodes

Keywords

aluminium; aluminium compounds; superconducting junction devices; superconductive tunnelling; Al-Al_xO_y-Al; DC voltage gain; R-SETs; correlated transfer; correlated tunneling; middle electrode; one-dimensional array; power gain; resistively-coupled single-electron transistor; superconductivity; ultrasmall junctions; Capacitance; Electrodes; Numerical simulation; Physics; Resistors; Single electron transistors; Superconductivity; Testing; Tunneling; Voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133743

Filename

133743