Title :
1-D array implementation of the resistively-coupled single-electron transistor
Author :
Delsing, P. ; Claeson, T. ; Kazacha, G.S. ; Kuzmin, L.S. ; Likharev, K.K.
Author_Institution :
Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
3/1/1991 12:00:00 AM
Abstract :
The authors fabricated and tested the first version of the resistively coupled single-electron transistor (R-SET) based on the correlated transfer of single electrons in ultrasmall junctions. In this version, a one-dimensional array of 80×80 nm2 Al/AlxOy/Al junctions served as a resistor for transmission of the signal to the middle electrode of a pair of similar junctions. Of three tested R-SETs, all exhibited a real power gain, and one device showed a DC voltage gain of 0.85. The data are found to be in reasonable agreement with numerical simulations based on the orthodox theory of correlated tunneling taking into account the superconductivity of aluminum electrodes
Keywords :
aluminium; aluminium compounds; superconducting junction devices; superconductive tunnelling; Al-AlxOy-Al; DC voltage gain; R-SETs; correlated transfer; correlated tunneling; middle electrode; one-dimensional array; power gain; resistively-coupled single-electron transistor; superconductivity; ultrasmall junctions; Capacitance; Electrodes; Numerical simulation; Physics; Resistors; Single electron transistors; Superconductivity; Testing; Tunneling; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
