Comparison of Si and InSb as the normal layer of S-N-S junctions

Author

Hato, T. ; Akaike, H. ; Fujimaki, A. ; Takai, Y. ; Hayakawa, H.

Author_Institution

Dept. of Electron., Nagoya Univ., Japan

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

2585

Lastpage

2588

Abstract

Superconductor-semiconductor-superconductor (S-N-S) weak-link junctions with a normal layer of Si or InSb thin films were prepared by using focused ion beam (FIB) methods. The electrical properties were measured. Whereas InSb thin films on single crystals did not have an intrinsic mobility, S-N-S junctions with InSb show the characteristics of a Josephson S-N-S junction. A 200-nm-thick film of InSb deposited on MgO has a mobility of 83 cm²/V-s and a carrier density of 6.5×10¹⁷ cm^-3 at 4.2 K. The coherence length ξ_n was computed to be 17 nm. A critical superconducting current I_c of 100 μA was obtained for the S-N-S junction which had a line width of 10 μm and a channel length of 20 nm

Keywords

Josephson effect; elemental semiconductors; niobium; silicon; superconducting junction devices; type II superconductors; 4.2 K; III-V semiconductors; Josephson S-N-S junction; Nb-InSb-Nb; Nb-Si-Nb; S-N-S junctions; carrier density; coherence length; critical superconducting current; electrical properties; focused ion beam; line width; mobility; superconductor-semiconductor-superconductor junctions; weak-link junctions; Charge carrier density; Fabrication; Ion beams; Josephson junctions; Niobium; Sputtering; Superconducting epitaxial layers; Superconducting films; Superconducting integrated circuits; Superconducting thin films;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133744

Filename

133744