DocumentCode :
1117583
Title :
Nonplanar multiple-epitaxy bipolar power integrated-circuit process
Author :
Curran, Pat ; Ang, Simon S.
Author_Institution :
Texas Instruments, Inc., Dallas, TX
Volume :
34
Issue :
8
fYear :
1987
fDate :
8/1/1987 12:00:00 AM
Firstpage :
1823
Lastpage :
1830
Abstract :
The market need to merge digital, analog, and power components on a common monolithic substrate in a cost-effective manner continues to grow in importance in many applications. This paper describes a nonplanar multiple-epitaxy bipolar power integrated-cir-Cuit process that is particularly well-suited for low-cost power applications such as series-pass voltage regulators. The concept enhances transistor characteristics and can be extended to more complex, higher performance intelligent power IC applications.
Keywords :
CMOS process; Epitaxial layers; Fabrication; Integrated circuit technology; Isolation technology; Lattices; Power generation economics; Power integrated circuits; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23157
Filename :
1486868
Link To Document :
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