Title :
Nonplanar multiple-epitaxy bipolar power integrated-circuit process
Author :
Curran, Pat ; Ang, Simon S.
Author_Institution :
Texas Instruments, Inc., Dallas, TX
fDate :
8/1/1987 12:00:00 AM
Abstract :
The market need to merge digital, analog, and power components on a common monolithic substrate in a cost-effective manner continues to grow in importance in many applications. This paper describes a nonplanar multiple-epitaxy bipolar power integrated-cir-Cuit process that is particularly well-suited for low-cost power applications such as series-pass voltage regulators. The concept enhances transistor characteristics and can be extended to more complex, higher performance intelligent power IC applications.
Keywords :
CMOS process; Epitaxial layers; Fabrication; Integrated circuit technology; Isolation technology; Lattices; Power generation economics; Power integrated circuits; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23157