DocumentCode :
1117708
Title :
Improved ZCS-PWM commutation cell for IGBTs application
Author :
Wang, Chien-Ming ; Su, Juing-Huei ; Yang, Chia-Hao
Author_Institution :
Dept. of Electron. Eng., Lunghwa Univ. of Sci. & Technol., Taoyuan, Taiwan
Volume :
40
Issue :
3
fYear :
2004
fDate :
7/1/2004 12:00:00 AM
Firstpage :
879
Lastpage :
888
Abstract :
An improved zero-current-switching pulsewidth-modulated (ZCS-PWM) commutation cell is presented, which is suitable for high-power applications using insulated gate bipolar transistors (IGBTs) as the power switches. It provides ZCS operation for active switches and zero-voltage-switching (ZVS) operation for passive switches. Besides operating at constant frequency and reducing commutation losses, the proposed ZCS-PWM switch cell has no additional current stress and conduction loss in the main switch. To demonstrate the feasibility of the proposed ZCS-PWM commutation cell, it was applied to a boost converter. Operating principle, theoretical analysis, design guidelines, and a design example are described and verified by experiment results obtained from a prototype rated 1 kW and operating at 40 kHz. The PWM switch model and state-space averaging approach is also used to estimate and examine the steady-state and dynamic character of ZCS-PWM boost converter system. Finally, the application of the proposed soft-switching technique in the dc-dc nonisolated converters is presented.
Keywords :
DC-DC power convertors; PWM power convertors; insulated gate bipolar transistors; state-space methods; switching convertors; 1 KW; 40 KHz; IGBT application; PWM switch; ZCS-PWM boost converter; ZCS-PWM commutation cell; ZCS-PWM switch cell; active switches; commutation losses reduction; conduction loss; constant frequency; current stress; dc-dc nonisolated converters; design guidelines; dynamic characteristics; high-power applications; insulated gate bipolar transistors; operating principle; passive switches; power switches; soft-switching technique; state-space averaging approach; steady-state characteristics; theoretical analysis; zero-current-switching pulsewidth-modulated; zero-voltage-switching operation; Frequency; Guidelines; Insulated gate bipolar transistors; Prototypes; Pulse width modulation; Pulse width modulation converters; Stress; Switches; Zero current switching; Zero voltage switching;
fLanguage :
English
Journal_Title :
Aerospace and Electronic Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9251
Type :
jour
DOI :
10.1109/TAES.2004.1337461
Filename :
1337461
Link To Document :
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