• DocumentCode
    1117861
  • Title

    A unified physical DC and AC MESFET model for circuit simulation and device modeling

  • Author

    Johnson, Robert H. ; Johnson, B.W. ; Biard, J.R.

  • Author_Institution
    Honeywell Optoelectronics, Richardson, TX
  • Volume
    34
  • Issue
    9
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    1995
  • Lastpage
    2001
  • Abstract
    A physically based MESFET model for device modeling and circuit simulation has been developed. The model directly couples the dc and ac models and takes into account velocity saturation as well as the impurity profile as integral parts of the dc and ac models. The model, verified for implanted self-aligned MESFET´s, has been implemented in SPICE and used to simulate circuits.
  • Keywords
    Circuit simulation; Coupling circuits; Implants; Impurities; Inverters; MESFET circuits; Mathematical model; Mathematics; SPICE; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23186
  • Filename
    1486897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1117861