Title :
A unified physical DC and AC MESFET model for circuit simulation and device modeling
Author :
Johnson, Robert H. ; Johnson, B.W. ; Biard, J.R.
Author_Institution :
Honeywell Optoelectronics, Richardson, TX
fDate :
9/1/1987 12:00:00 AM
Abstract :
A physically based MESFET model for device modeling and circuit simulation has been developed. The model directly couples the dc and ac models and takes into account velocity saturation as well as the impurity profile as integral parts of the dc and ac models. The model, verified for implanted self-aligned MESFET´s, has been implemented in SPICE and used to simulate circuits.
Keywords :
Circuit simulation; Coupling circuits; Implants; Impurities; Inverters; MESFET circuits; Mathematical model; Mathematics; SPICE; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23186
