Lateral diffusion contributions to contact mismatch in Kelvin resistor structures

In measuring very low values of specific contact resistivity with either conventional or self-aligned Kelvin resistor structures, it is important to know the extent of contact window/diffused region mismatch to within approximately a transfer length to be able to produce accurate results. This study uses a three-dimensional computer model to determine the contribution of lateral diffusion to contact mismatch, and suggests a simple correction method to account for it.