• DocumentCode
    111794
  • Title

    A 1.2-V 4.2- \\hbox {p\\pm}/^{\\circ}\\hbox {C} High-Order Curvature-Compensated CMOS Bandgap Reference

  • Author

    Quanzhen Duan ; Jeongjin Roh

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Hanyang Univ., Ansan, South Korea
  • Volume
    62
  • Issue
    3
  • fYear
    2015
  • fDate
    Mar-15
  • Firstpage
    662
  • Lastpage
    670
  • Abstract
    This study presents a high-precision CMOS bandgap reference (BGR) circuit with low supply voltage. The proposed BGR circuit consists of two BGR cores and a curvature correction circuit, which includes a current mirror and a summing circuit. Two BGR cores adopt conventional structures with the curvature-down characteristics. A current-mirror circuit is proposed to implement one of the BGR cores to have the curvature-up characteristic. Selection of the appropriate resistances in the BGR cores results in one reference voltage with a well balanced curvature-down characteristic and another reference voltage with an evenly balanced curvature-up characteristic. The summation of these reference voltages is proposed to achieve a high-order curvature compensation. This curvature correction circuit causes the proposed BGR circuit without any trimming to show a measured temperature coefficient (TC) as low as 4.2 ppm/°C over a wide temperature range of 160 °C (-40 ~ 120 °C) at a power supply voltage of 1.2 V. The average TC for 8 random samples is approximately 9.3 ppm/°C. The measured power-supply rejection ratio (PSRR) of -30 dB is achieved at the frequency of 100 kHz. The total chip size is 0.063 mm2 with a standard 0.13-μm CMOS process.
  • Keywords
    CMOS integrated circuits; current mirrors; reference circuits; summing circuits; CMOS bandgap reference circuit; current mirror; curvature correction circuit; evenly balanced curvature-up characteristic; high-order curvature compensated reference circuit; low supply voltage; reference voltage; size 0.13 mum; summing circuit; temperature -40 C to 120 C; voltage 1.2 V; well balanced curvature-down characteristic; Accuracy; CMOS integrated circuits; MOSFET; Photonic band gap; Resistors; Temperature dependence; Bandgap reference; high-order curvature compensation; high-precision; low voltage; temperature coefficient;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2014.2374832
  • Filename
    6999965