DocumentCode :
1117987
Title :
On the optimization of the gallium arsenide injection laser for maximum CW power output
Author :
Vilms, J. ; Wandinger, L. ; Klohn, K.L.
Author_Institution :
Electronic Componants., Lab., U.S. Army Electronics Command, Fort Monmouth, N.J.
Volume :
2
Issue :
4
fYear :
1966
fDate :
4/1/1966 12:00:00 AM
Firstpage :
80
Lastpage :
83
Abstract :
A basic mathematical model of the injection laser is employed to investigate several questions dealing with the maximum obtainable power output and factors which impose practical limitations on it. With the aid of the rate equations for electron and photon densities and a simple model of thermal resistance, it is shown that there is an optimum value of diode area WL and of the parameter 
, which suggests that the CW power output can not be increased indefinitely with larger diodes. Rough numerical results are presented for CW operation at 77°K, assuming parabolic bands and band-to-band transitions without conservation of crystal momentum.
, which suggests that the CW power output can not be increased indefinitely with larger diodes. Rough numerical results are presented for CW operation at 77°K, assuming parabolic bands and band-to-band transitions without conservation of crystal momentum.Keywords :
Diodes; Electrons; Equations; Gallium arsenide; Laser modes; Laser theory; Laser transitions; Power lasers; Spontaneous emission; Thermal resistance;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1966.1073832
Filename :
1073832
Link To Document :
