• DocumentCode
    1118061
  • Title

    Impact of High-Field Charge Transport on Terahertz Emission From Semiconductor Devices

  • Author

    Acua, G.P. ; Bursgens, F. ; Lang, Christian ; Kersting, Roland

  • Author_Institution
    Univ. of Munich, Munich
  • Volume
    14
  • Issue
    2
  • fYear
    2008
  • Firstpage
    482
  • Lastpage
    485
  • Abstract
    We present an experimental study that provides insight into the charge carrier dynamics that lead to terahertz (THz) emission. We perform time-resolved THz experiments on semiinsulating GaAs structures with periodically poled surface electrodes. The individual charge carrier dynamics that contribute to the THz emission process are identified by their dependence on the applied field. Electron transport in inhomogeneous fields is found to dominate the emission of THz radiation. Other dynamics that become visible by their specific THz emission are the Dember effect, the intervalley transfer of electrons, and hole currents at high field strengths.
  • Keywords
    Dember effect; III-V semiconductors; charge exchange; electron transport theory; gallium arsenide; Dember effect; GaAs; THz emission process; charge carrier dynamics; electron transport; high-field charge transport; inhomogeneous fields; periodically poled surface electrodes; semiconductor devices; semiinsulating GaAs structures; terahertz emission; Charge carriers; Electrodes; Electron emission; Gallium arsenide; Nonuniform electric fields; Optical pulse compression; Optical pulse generation; Optical surface waves; Semiconductor devices; Ultrafast optics; Millimeter wave generation; Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter; optical pulse generation and pulse compression; ultrafast processes;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2007.910983
  • Filename
    4481098