• DocumentCode
    1118071
  • Title

    Electrical characteristics of MOSFET´s utilizing Oxygen—Argon sputter-deposited gate Oxide films

  • Author

    Suyama, Shiro ; Okamoto, Akio ; Serikawa, Tadashi

  • Author_Institution
    Nippon Telegraph and Telephone Corporation, Tokyo, Japan
  • Volume
    34
  • Issue
    10
  • fYear
    1987
  • fDate
    10/1/1987 12:00:00 AM
  • Firstpage
    2124
  • Lastpage
    2128
  • Abstract
    This paper presents a detailed look at the electrical characteristics of MOSFET´s utilizing oxygen-argon sputter-deposited gate-oxide films for low-temperature MOSFET fabrication. The gate-oxide films are deposited at low temperature (200°C) by oxygen-argon sputtering of an SiO2target. The MOSFET´s so formed are confirmed to have triode characteristics. Moreover, oxygen mixing makes it possible to considerably improve the MOSFET field-effect mobility and subthreshold slope over those of argon-only sputter-deposited film to 700 cm2/V´s and 170 mV/decade. These improvements are found to be caused by the remarkable reduction in surface-state density. These results confirm the usefulness of oxygen-argon sputter-deposited gate-oxide films for MOSFET fabrication at low temperature.
  • Keywords
    Electric breakdown; Electric variables; Fabrication; MOSFET circuits; Plasma temperature; Semiconductor films; Silicon; Sputtering; Substrates; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23206
  • Filename
    1486917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1118071