Title :
Designs of Silicon MIS Phase Modulator With a Deposited AlN Film as the Gate Dielectric
Author :
Shiyang Zhu ; Guo-Qiang Lo
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore
Abstract :
We propose and analyze a silicon metal-insulator- semiconductor phase modulator based on a poly-Si/AlN/Si horizontal slot waveguide. The AlN gate dielectric exhibits an inherent Pockels effect, which can provide additional phase modulation besides that provided by the free-carrier plasma dispersion effect of Si. The proposed modulator with an optimized geometry offers a high modulation efficiency of 0.95 V · cm for the 1.55-μm transverse magnetic light even the electrooptical coefficient of AlN (r33) is only 1 pm/V, which is ~40% better than the SiO2 counterpart with the same equivalent oxide thickness. The modulation efficiency increases quickly with r33 increasing, reaching 0.2 V · cm when r33 is 10 pm/V.
Keywords :
MIS devices; Pockels effect; aluminium compounds; electro-optical modulation; geometrical optics; integrated optics; optical design techniques; optical films; optical waveguides; optimisation; phase modulation; silicon; Pockels effect; Si-AlN-Si; aluminium nitride film deposition; aluminium nitride gate dielectric; electrooptical coefficient; free-carrier plasma dispersion effect; geometry optimization; poly-silicon-aluminium nitride-silicon horizontal slot waveguide; silicon MIS phase modulator designs; silicon metal-insulator- semiconductor phase modulator; transverse magnetic light; wavelength 1.55 mum; Dielectrics; Electrooptic modulators; III-V semiconductor materials; Logic gates; Optical waveguides; Silicon; CMOS compatibility; Waveguide modulators; electro-optic materials; integrated optics devices;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2015.2415484
