Hot-electron effects in Silicon-on-insulator n-channel MOSFET´s

Hot-electron degradation has been measured in short-channel bulk and SOI MOSFET´s. The presence of a floating substrate in the SOI devices appears to increase the drain-saturation voltage and, therefore, to reduce the drain electric field. This effect is even further enhanced when thin fully depleted films are considered. Electrical stress measurements and device modeling suggest that hot-electron degradation should be smaller in SOI MOSFET´s than in their bulk counterparts.