DocumentCode :
1118148
Title :
Origin of 1/f3/2noise in GaAs thin-film resistors and MESFET´s
Author :
Pouységur, Michel ; Graffeuil, Jacques ; Cazaux, Jean-Louis
Author_Institution :
Laboratoire d´´Automatique et d´´Analyse des Systémes du C.N.R.S., Toulouse Cedex, France
Volume :
34
Issue :
10
fYear :
1987
fDate :
10/1/1987 12:00:00 AM
Firstpage :
2178
Lastpage :
2184
Abstract :
This paper addresses the problem of 1/f3/2low-frequency noise in GaAs thin-film resistors and MESFET\´s. Experimental data seem to rule out the existence of the so-called "diffusion noise" usually invoked in GaAs devices. Therefore, we propose a new "surface thermal-noise" model based on the existence of lumped thermal-noise generators distributed along the semiconductor-air or semiconductor-dielectric protection interface. The observed dependence of the low-frequency noise on the surface resistance of different MESFET\´s supports our conclusions.
Keywords :
Frequency; Gallium arsenide; Low-frequency noise; MESFETs; Noise generators; Protection; Resistors; Semiconductor device noise; Semiconductor thin films; Surface resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23214
Filename :
1486925
Link To Document :
بازگشت