• DocumentCode
    1118148
  • Title

    Origin of 1/f3/2noise in GaAs thin-film resistors and MESFET´s

  • Author

    Pouységur, Michel ; Graffeuil, Jacques ; Cazaux, Jean-Louis

  • Author_Institution
    Laboratoire d´´Automatique et d´´Analyse des Systémes du C.N.R.S., Toulouse Cedex, France
  • Volume
    34
  • Issue
    10
  • fYear
    1987
  • fDate
    10/1/1987 12:00:00 AM
  • Firstpage
    2178
  • Lastpage
    2184
  • Abstract
    This paper addresses the problem of 1/f3/2low-frequency noise in GaAs thin-film resistors and MESFET\´s. Experimental data seem to rule out the existence of the so-called "diffusion noise" usually invoked in GaAs devices. Therefore, we propose a new "surface thermal-noise" model based on the existence of lumped thermal-noise generators distributed along the semiconductor-air or semiconductor-dielectric protection interface. The observed dependence of the low-frequency noise on the surface resistance of different MESFET\´s supports our conclusions.
  • Keywords
    Frequency; Gallium arsenide; Low-frequency noise; MESFETs; Noise generators; Protection; Resistors; Semiconductor device noise; Semiconductor thin films; Surface resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23214
  • Filename
    1486925
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1118148