Title :
Comparison of Type I and Type II Heterojunction Unitravelling Carrier Photodiodes for Terahertz Generation
Author :
Dyson, Angela ; Henning, Ian D. ; Adams, Michael J.
Author_Institution :
Univ. of Essex, Colchester
Abstract :
To assess the potential for terahertz generation, we have numerically simulated unitravelling carrier photodiodes with type I InGaAs/InP and type II GaAsSb-InP heterojunctions. The simulations give good agreement with published experimental results detailing device operation and 3 dB bandwidth. The optimization of these structures as photomixers by reducing the layer thickness of the absorber and varying the doping of the absorber and collector layers shows excellent potential for terahertz generation.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; photodiodes; semiconductor doping; semiconductor heterojunctions; GaAsSb-InP; InGaAs-InP; absorber; collector; doping; heterojunctions; photomixers; terahertz generation; unitravelling carrier photodiodes; Bandwidth; Frequency; Heterojunctions; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical superlattices; Photoconductivity; Photodiodes; Ultrafast optics; Heterodyne; numerical approximation and analysis; photodetectors; ultrafast devices;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2007.910107
