DocumentCode
1118208
Title
Pseudocollector effect in a CMOS inverter
Author
Lee, Chun-teh
Author_Institution
Massachusetts Institute of Technology, Lexington, MA
Volume
34
Issue
10
fYear
1987
fDate
10/1/1987 12:00:00 AM
Firstpage
2212
Lastpage
2214
Abstract
The pseudocollector effect in a CMOS inverter is demonstrated by analyzing the current distribution in the latchup state. The decoupling of the current flow from the latchup feedback loop is controlled by the input voltage applied to the gates of n- and p-channel MOSFET´s, which results in a reduction of latchup susceptibility. Latchup in a CMOS inverter is influenced by the input voltage through pseudocollector and potential modulation effects. A simple SCR structure cannot reflect adequately these phenomena.
Keywords
Electron devices; Equations; HEMTs; Hot carriers; Inverters; MODFETs; MOSFET circuits; Optical scattering; Probability; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23219
Filename
1486930
Link To Document