SIS junction reactance complete compensation

Author

Belitsky, V. Yu ; Tarasov, M.A.

Author_Institution

Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, USSR

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

2638

Lastpage

2641

Abstract

Superconductor-insulator-superconductor (SIS) junction geometrical capacitance with out of phase current I_kk impedance component forms sufficient junction reactance X_SIS=(ωC+B_Q) ^-1. It is suggested that the way to resonate out both ω C and B_Q is by using an additional identical SIS junction connected to the first through a long line impedance inverter and RF+DC biased symmetrically to the first. Pumped I-V curves without quantum reactance and frequency impedance patterns of the system are calculated. Calculations demonstrated the presence of high and even negative induced dynamic resistance regions at high-order quasiparticle steps for the case of SIS junction reactance complete compensation. The suggested method may be used in SIS mixers and detectors for a better RF matching

Keywords

invertors; mixers (circuits); solid-state microwave circuits; superconducting junction devices; I-V curves; RF matching; SIS junction reactance; dynamic resistance regions; frequency impedance patterns; geometrical capacitance; high-order quasiparticle steps; long line impedance inverter; Detectors; Impedance; Inverters; Josephson junctions; Q factor; Quantum capacitance; Radio frequency; Superconducting devices; Topology; Voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133753

Filename

133753