DocumentCode :
1118450
Title :
Temperature Dependence of Thermal Conductivity and Boundary Resistance in THz Quantum Cascade Lasers
Author :
Vitiello, Miriam Serena ; Scamarcio, Gaetano ; Spagnolo, Vincenzo
Author_Institution :
Univ. degli Studi di Bari, Bari
Volume :
14
Issue :
2
fYear :
2008
Firstpage :
431
Lastpage :
435
Abstract :
We measured the lattice temperature distribution, the cross-plane thermal conductivity , and the thermal boundary resistance (TBR) of the As quantum cascade lasers (QCLs) operating at 2.83 THz in the heat sink temperature range 45-300 K. This information was extracted from the analysis of microprobe band-to-band photoluminescence in QCLs operating in continuous wave. Both and TBR decrease monotonically at increasing temperature, the main influence on arising from the high density of interfaces.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photoluminescence; quantum cascade lasers; submillimetre wave lasers; thermal conductivity; GaAs-Al0.15Ga0.85As; cross-plane thermal conductivity; heat sink; interface density; lattice temperature distribution; microprobe band-to-band photoluminescence; quantum cascade lasers; temperature 45 K to 300 K; thermal boundary resistance; Conductivity measurement; Electrical resistance measurement; Lattices; Quantum cascade lasers; Resistance heating; Temperature dependence; Temperature distribution; Temperature measurement; Thermal conductivity; Thermal resistance; Microprobe photoluminescence; terahertz quantum cascade lasers (THz QCLs); thermal boundary resistance; thermal conductivity;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2007.910102
Filename :
4481135
Link To Document :
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