مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1118505

Title :

IIA-2 saturable charge FET

Author :

Solomon, Paul M. ; Frank, David J. ; Baratte, H. ; La Tulipe, D. ; Wright, S.L.

Volume :

Issue :

fYear :

1987

fDate :

11/1/1987 12:00:00 AM

Firstpage :

2356

Lastpage :

2356

Keywords :

Capacitance; Electrons; FETs; Gallium arsenide; HEMTs; Heterojunctions; Insulation; MODFETs; Transconductance; Voltage;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1987.23247

Filename :

1486958

Link To Document :