IIA-4 The effect of buried p-doped layers on the current saturation mechanism in AlGaAs/InGaAs/GaAs MODFET´s

Author

Schaff, W.J. ; Tasker, P.J. ; Foisy, M.C. ; Eastman, L.F.

Volume

Issue

fYear

1987

fDate

11/1/1987 12:00:00 AM

Firstpage

2357

Lastpage

2357

Keywords

Carrier confinement; Degradation; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; Laboratories; MESFETs; MODFETs; Radio frequency;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1987.23248

Filename

1486959

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