Title :
IIA-5 Pulse-doped AlGaAs/InGaAs pseudomorphic MODFET´s
Author :
Moll, N. ; Fischer-Colbrie, A. ; Hueschen, M.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Conducting materials; Doping; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; Indium gallium arsenide; Laboratories; MODFETs; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23249
