Title :
IIA-7 an AlSb/InAs/AlSb quantum well HFT
Author :
Tuttle, G. ; Kroemer, H.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Current density; Epitaxial layers; Fabrication; Gallium arsenide; HEMTs; Indium phosphide; Lattices; Quantum computing; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23252
