• DocumentCode
    1118553
  • Title

    IIA-7 an AlSb/InAs/AlSb quantum well HFT

  • Author

    Tuttle, G. ; Kroemer, H.

  • Volume
    34
  • Issue
    11
  • fYear
    1987
  • fDate
    11/1/1987 12:00:00 AM
  • Firstpage
    2358
  • Lastpage
    2358
  • Keywords
    Current density; Epitaxial layers; Fabrication; Gallium arsenide; HEMTs; Indium phosphide; Lattices; Quantum computing; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23252
  • Filename
    1486963