Title :
IIB-1 new complementary MOS-gate bipolar transistors
Author :
Mori, Marco ; Tanaka, T. ; Yatsuo, Tsutomu ; Okamura, M.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Bipolar transistors; Current density; Insulated gate bipolar transistors; Leakage current; MOSFET circuits; Passivation; Power MOSFET; Research and development; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23255
