DocumentCode
1118621
Title
IIB-6 a three-dimensional high-voltage CMOS utilizing a laser-recrystallized SOI layer
Author
Sasaki, Naoki ; Kawamura, Sadao ; Kawai, Shigeaki ; Shirato, Toru ; Nakano, M.
Volume
34
Issue
11
fYear
1987
fDate
11/1/1987 12:00:00 AM
Firstpage
2361
Lastpage
2361
Keywords
CMOS technology; Circuits; Displays; Fabrication; Gallium arsenide; Heterojunctions; Implants; Isolation technology; Leakage current; Semiconductor lasers;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23258
Filename
1486969
Link To Document