Title :
IIB-7 GaAs/(Al, Ga)As heterojunction bipolar transistors and semiconductor controlled rectifiers for high-temperature (T > 300°C) power semiconductor electronics
Author :
Zipperian, T.E. ; Brennan, T.M. ; Hammons, B.E.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Leakage current; Power systems; Semiconductor materials; Space technology; Temperature; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23259
