DocumentCode
1118633
Title
IIB-7 GaAs/(Al, Ga)As heterojunction bipolar transistors and semiconductor controlled rectifiers for high-temperature (T > 300°C) power semiconductor electronics
Author
Zipperian, T.E. ; Brennan, T.M. ; Hammons, B.E.
Volume
34
Issue
11
fYear
1987
fDate
11/1/1987 12:00:00 AM
Firstpage
2361
Lastpage
2361
Keywords
Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Leakage current; Power systems; Semiconductor materials; Space technology; Temperature; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23259
Filename
1486970
Link To Document