DocumentCode :
1118655
Title :
IIIA-1 high-frequency GaInAs/InP multiple quantum well buried mesa electroabsorption optical modulator
Author :
Miller, B.I. ; Koren, U. ; Tucker, Rodney ; Eisenstein, Gadi ; Bar-Joseph, I. ; Miller, David A. B. ; Chemla
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2362
Lastpage :
2362
Keywords :
Absorption; Bandwidth; Indium phosphide; Insertion loss; Iron; Optical modulation; PIN photodiodes; Quantum well devices; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23262
Filename :
1486973
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1118655
