Title :
IIIB-1 submicrometer IGFET fabrication by rapid thermal processing
Author :
Moslehi, M.M. ; Wright, P.J. ; Saraswat, Krishna C.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Annealing; Argon; Boron; Dielectrics; Fabrication; Grain size; Oxidation; Rapid thermal processing; Semiconductor films; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23270
