Simulation of Laser-Based Two-Photon Absorption Induced Charge Carrier Generation in Silicon

Author

Hales, Joel M. ; Khachatrian, Ani ; Roche, Nicolas J.-H ; Warner, Jeffrey ; Buchner, Stephen P. ; McMorrow, Dale

Author_Institution

Annapolis Junction, Sotera Defense, Annapolis, MD, USA

Volume

62

Issue

4

fYear

2015

fDate

Aug. 2015

Firstpage

1550

Lastpage

1557

Abstract

Numerical simulation software is used to calculate quantitatively the two-photon absorption-induced carrier-density distributions generated under conditions that are experimentally relevant for single-event effects studies. The results provide valuable insight into how the magnitudes and shapes of the charge carrier distributions evolve over a large range of experimental conditions and the impacts this has for different device geometries. Furthermore, values of integrated charge are determined that can be more directly correlated with experimental observables.

Keywords

carrier density; elemental semiconductors; silicon; two-photon processes; Si; laser-based two-photon absorption induced charge carrier generation; numerical simulation software; two-photon absorption-induced carrier-density distributions; Focusing; Laser beams; Measurement by laser beam; Nonlinear optics; Optical beams; Shape; Silicon; CMOS; free-carrier absorption; free-carrier refraction; nonlinear optics; optical Kerr effect; silicon; single-event effect (SEE); single-event upset (SEU); two-photon absorption;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2422793

Filename

7132797