Title :
Enhanced transconductance in deep submicrometer MOSFET
Author :
Hänsch, W. ; Jacobs, H.
Author_Institution :
Siemens AG, Munich, West Germany
fDate :
7/1/1989 12:00:00 AM
Abstract :
It is shown that the enhanced transconductance observed in deep submicrometer MOSFETs at 77 and 300 K can be modeled using an extended drift-diffusion approximation with mobility parameters taken from measurements on MOSFETs of the 4-Mb DRAM generation. For the terminal characteristics of these devices, velocity overshoot is of little importance for devices with channel lengths larger than 60 nm.<>
Keywords :
carrier mobility; insulated gate field effect transistors; semiconductor device models; 300 K; 60 nm; 77 K; channel lengths; deep submicrometer MOSFET; extended drift-diffusion approximation; mobility parameters; modelling; submicron devices; terminal characteristics; transconductance; velocity overshoot; Circuit simulation; Circuit synthesis; Jacobian matrices; MOSFET circuits; Monte Carlo methods; Predictive models; Random access memory; Semiconductor process modeling; Silicon; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
