DocumentCode :
1118793
Title :
IIIB-7 technology for submicrometer Si/CoSi
2
Si epitaxial permeable-base transistor
Author :
Glastre, Genevieve ; Vincent, Gregory ; Vareille, A. ; Puissant, C. ; Rosencher, E.
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2368
Lastpage :
2368
Keywords :
Etching; Gratings; Molecular beam epitaxial growth; Plasma applications; Plasma materials processing; Semiconductor materials; Silicon; Surface cleaning; Surface contamination; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23276
Filename :
1486987
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1118793
